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 DATA SHEET
NEC's NPN SILICON TRANSISTOR NE685M33
FEATURES
* * * LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER NE685M33-A NE685M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM * 8 mm wide embossed taping * Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot
Note
RATINGS 9.0 6.0 2.0 30 130 150 -65 to +150
UNIT V V V mA mW C C
Tj Tstg
Note Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NE685M33 ELECTRICAL CHARACTERISTICS (TA =+25C)
PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance fT |S21e|2 NF Cre Note 2 VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = Zopt VCB = 3 V, IC = 0 mA, f = 1 MHz 10 7 - - 12 11 1.5 0.4 - - 2.5 0.7 GHz dB dB pF ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 10 mA - - 75 - - 110 100 100 150 nA nA - SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK Marking hFE Value FB Y2 75 to 150
NE685M33 TYPICAL CHARACTERISTICS (TA =+25C, unless otherwise specified)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance Cre (pF) 250 Total Power Dissipation Ptot (mW) 200 150
130
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
0.5 0.4 0.3 0.2 0.1 f = 1 MHz
Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) )
100 50
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature TA (C)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 Collector Current IC (mA) 10 1 0.1 0.01 VCE = 1 V Collector Current IC (mA) 100 10 1 0.1 0.01
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 2 V
0.001 0.5 0.6 0.7 0.8 0.9 1.0
0.001 0.5 0.6 0.7 0.8 0.9 1.0
0.0001 0.4
0.0001 0.4
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
100 10 1 0.1 0.01
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 3V Collector Current IC (mA) 40 35 30 25 20 15 10 5 0.5 0.6 0.7 0.8 0.9 1.0 0
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
400 A 350 A 300 A 250 A 200 A 150 A 100 A IB = 50 A 2 4 6 8
0.001
0.0001 0.4
Base to Emitter Voltage VBE (V)
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
NE685M33 TYPICAL CHARACTERISTICS (TA =+25C, unless otherwise specified)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000 VCE = 1 V 1000
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 2 V
DC Current Gain hFE
100
DC Current Gain hFE 1 10 100
100
10 0.1
10 0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
DC CURRENT GAIN vs. COLLECTOR CURRENT
1000 VCE = 3 V
DC Current Gain hFE
100
10 0.1
1
10
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
NE685M33 PACKAGE DIMENSIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm)
0.640.05 0.440.05
(Bottom View)
0.285
0.840.05
2
0.57
3 0.125
Y2
1. Emitter 2. Base 3. Collector
0.125
0.15
0.15
0.4
0.11
NE package code: M33 SOT number: -
PIN CONNECTIONS
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
0.15
1
06/22/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.


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